AM40N08-30D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM40N08-30D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 36 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 154 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: TO-252

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AM40N08-30D datasheet

 ..1. Size:291K  analog power
 am40n08-30d.pdf pdf_icon

AM40N08-30D

Analog Power AM40N08-30D N-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 26 @ VGS = 10V 36 Low thermal impedance 80 36 @ VGS = 4.5V 31 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 8.1. Size:297K  analog power
 am40n04-30d.pdf pdf_icon

AM40N08-30D

Analog Power AM40N04-30D N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 32 @ VGS = 10V 33 Low thermal impedance 40 42 @ VGS = 4.5V 29 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 8.2. Size:74K  analog power
 am40n06-28d.pdf pdf_icon

AM40N08-30D

Analog Power AM40N06-28D N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 28 @ VGS = 10V 35 converters and power management in portable and 60 30 @ VGS = 4.5V 34 batte

 8.3. Size:276K  analog power
 am40n04-30de.pdf pdf_icon

AM40N08-30D

Analog Power AM40N04-30DE N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 32 @ VGS = 10V 33 converters and power management in portable and 40 42 @ VGS = 4.5V 29 batt

MOSTRAR MÁS

Otros transistores... AM3962N, AM3962NE, AM3993P, AM3998N, AM40N04-20D, AM40N04-30D, AM40N04-30DE, AM40N06-28D, AO4407, AM40N10-28D, AM40N10-30D, AM40N10-30I, AM40N20-180P, AM40P02-20D, AM40P03-20D, AM40P03-20I, AM40P03-34D