All MOSFET. AM40N08-30D Datasheet

 

AM40N08-30D Datasheet and Replacement


   Type Designator: AM40N08-30D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 154 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TO-252
 

 AM40N08-30D substitution

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AM40N08-30D Datasheet (PDF)

 ..1. Size:291K  analog power
am40n08-30d.pdf pdf_icon

AM40N08-30D

Analog Power AM40N08-30DN-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)26 @ VGS = 10V36 Low thermal impedance 8036 @ VGS = 4.5V31 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 8.1. Size:297K  analog power
am40n04-30d.pdf pdf_icon

AM40N08-30D

Analog Power AM40N04-30DN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)32 @ VGS = 10V33 Low thermal impedance 4042 @ VGS = 4.5V29 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 8.2. Size:74K  analog power
am40n06-28d.pdf pdf_icon

AM40N08-30D

Analog Power AM40N06-28DN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 28 @ VGS = 10V 35converters and power management in portable and 6030 @ VGS = 4.5V 34batte

 8.3. Size:276K  analog power
am40n04-30de.pdf pdf_icon

AM40N08-30D

Analog Power AM40N04-30DEN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 32 @ VGS = 10V 33converters and power management in portable and 4042 @ VGS = 4.5V 29batt

Datasheet: AM3962N , AM3962NE , AM3993P , AM3998N , AM40N04-20D , AM40N04-30D , AM40N04-30DE , AM40N06-28D , P60NF06 , AM40N10-28D , AM40N10-30D , AM40N10-30I , AM40N20-180P , AM40P02-20D , AM40P03-20D , AM40P03-20I , AM40P03-34D .

History: TSM4433CS | SSM3K339R | AM3933P | CED75A3 | SI2304 | AP85T10GR-HF | VS3625DP2-G

Keywords - AM40N08-30D MOSFET datasheet

 AM40N08-30D cross reference
 AM40N08-30D equivalent finder
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