AM40P04-20DE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM40P04-20DE
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 50 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 36 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 13.9 nC
Tiempo de subida (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 278 pF
Resistencia entre drenaje y fuente RDS(on): 0.03 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET AM40P04-20DE
AM40P04-20DE Datasheet (PDF)
am40p04-20de.pdf
Analog Power AM40P04-20DEP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 30 @ VGS = -10V 36converters and power management in portable and -40battery-powered prod
am40p06-135p.pdf
Analog Power AM40P06-135PP-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 135 @ VGS = -10Vconverters and power management in portable and -60-39a150 @ VGS = -4.5V
am40p02-20d.pdf
Analog Power AM40P02-20DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making VDS (V) rDS(on) m() ID (A)this device ideal for use in power management 20 @ VGS = -4.5V 41circuitry. Typical applications are PWMDC-DC -20converters, power manageme
am40p03-34d.pdf
Analog Power AM40P03-34DP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 34 @ VGS = -10V 32converters and power management in portable and -30battery-powered produ
am40p03-20i.pdf
Analog Power AM40P03-20IP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)20 @ VGS = -10V -41 Low thermal impedance -3035 @ VGS = -4.5V -31 Fast switching speed Typical Applications: TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO
am40p03-20d.pdf
Analog Power AM40P03-20DP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)20 @ VGS = -10V -41 Low thermal impedance -3035 @ VGS = -4.5V -31 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI
am40p06-135p.pdf
AM40P06-135Pwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY VDS (V) RDS(on) () TrenchFET Power MOSFETID (A) Qg (Typ) 100 % UIS Tested0.062 at VGS = - 10 V - 20- 60 12.50.074 at VGS = - 4.5 V - 15 APPLICATIONS Load SwitchSTO-220ABGDG D STop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParamet
am40p03-20d.pdf
AM40P03-20Dwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFET
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
