AM40P04-20DE. Аналоги и основные параметры
Наименование производителя: AM40P04-20DE
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 36 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 278 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
Тип корпуса: TO-252
Аналог (замена) для AM40P04-20DE
- подборⓘ MOSFET транзистора по параметрам
AM40P04-20DE даташит
am40p04-20de.pdf
Analog Power AM40P04-20DE P-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( ) ID (A) dissipation. Typical applications are DC-DC 30 @ VGS = -10V 36 converters and power management in portable and -40 battery-powered prod
am40p06-135p.pdf
Analog Power AM40P06-135P P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 135 @ VGS = -10V converters and power management in portable and -60 -39a 150 @ VGS = -4.5V
am40p02-20d.pdf
Analog Power AM40P02-20D P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making VDS (V) rDS(on) m( ) ID (A) this device ideal for use in power management 20 @ VGS = -4.5V 41 circuitry. Typical applications are PWMDC-DC -20 converters, power manageme
am40p03-34d.pdf
Analog Power AM40P03-34D P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( ) ID (A) dissipation. Typical applications are DC-DC 34 @ VGS = -10V 32 converters and power management in portable and -30 battery-powered produ
Другие IGBT... AM40N10-28D, AM40N10-30D, AM40N10-30I, AM40N20-180P, AM40P02-20D, AM40P03-20D, AM40P03-20I, AM40P03-34D, SI2302, AM40P06-135P, AM40P10-200P, AM40P20-150PCFM, AM4302N, AM4362N, AM4380N, AM4390N, AM4392N
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
irfp460 характеристики | k2837 datasheet | k389 transistor | mje15032g equivalent | nsd134 | 60r190p datasheet | cs30n20 datasheet | go42n10








