AM40P06-135P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM40P06-135P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm

Encapsulados: TO-220AB

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AM40P06-135P datasheet

 ..1. Size:117K  analog power
am40p06-135p.pdf pdf_icon

AM40P06-135P

Analog Power AM40P06-135P P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 135 @ VGS = -10V converters and power management in portable and -60 -39a 150 @ VGS = -4.5V

 ..2. Size:817K  cn vbsemi
am40p06-135p.pdf pdf_icon

AM40P06-135P

AM40P06-135P www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) ( ) TrenchFET Power MOSFET ID (A) Qg (Typ) 100 % UIS Tested 0.062 at VGS = - 10 V - 20 - 60 12.5 0.074 at VGS = - 4.5 V - 15 APPLICATIONS Load Switch S TO-220AB G D G D S Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Paramet

 8.1. Size:139K  analog power
am40p02-20d.pdf pdf_icon

AM40P06-135P

Analog Power AM40P02-20D P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making VDS (V) rDS(on) m( ) ID (A) this device ideal for use in power management 20 @ VGS = -4.5V 41 circuitry. Typical applications are PWMDC-DC -20 converters, power manageme

 8.2. Size:233K  analog power
am40p04-20de.pdf pdf_icon

AM40P06-135P

Analog Power AM40P04-20DE P-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( ) ID (A) dissipation. Typical applications are DC-DC 30 @ VGS = -10V 36 converters and power management in portable and -40 battery-powered prod

Otros transistores... AM40N10-30D, AM40N10-30I, AM40N20-180P, AM40P02-20D, AM40P03-20D, AM40P03-20I, AM40P03-34D, AM40P04-20DE, AO3407, AM40P10-200P, AM40P20-150PCFM, AM4302N, AM4362N, AM4380N, AM4390N, AM4392N, AM4394N