AM40P06-135P Todos los transistores

 

AM40P06-135P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM40P06-135P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 90 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1 V

Carga de compuerta (Qg): 19 nC

Tiempo de elevación (tr): 9 nS

Resistencia drenaje-fuente RDS(on): 0.135 Ohm

Empaquetado / Estuche: TO-220AB

Búsqueda de reemplazo de MOSFET AM40P06-135P

 

AM40P06-135P Datasheet (PDF)

1.1. am40p06-135p.pdf Size:117K _upd-mosfet

AM40P06-135P
AM40P06-135P

Analog Power AM40P06-135P P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m(Ω) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 135 @ VGS = -10V converters and power management in portable and -60 -39a 150 @ VGS = -4.5V

4.1. am40p03-20i.pdf Size:308K _upd-mosfet

AM40P06-135P
AM40P06-135P

Analog Power AM40P03-20I P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID(A) • Low r trench technology DS(on) 20 @ VGS = -10V -41 • Low thermal impedance -30 35 @ VGS = -4.5V -31 • Fast switching speed Typical Applications: TO-251 • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSO

4.2. am40p04-20de.pdf Size:233K _upd-mosfet

AM40P06-135P
AM40P06-135P

Analog Power AM40P04-20DE P-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m(Ω) ID (A) dissipation. Typical applications are DC-DC 30 @ VGS = -10V 36 converters and power management in portable and -40 battery-powered prod

 4.3. am40p02-20d.pdf Size:139K _upd-mosfet

AM40P06-135P
AM40P06-135P

Analog Power AM40P02-20D P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making VDS (V) rDS(on) m(Ω) ID (A) this device ideal for use in power management 20 @ VGS = -4.5V 41 circuitry. Typical applications are PWMDC-DC -20 converters, power manageme

4.4. am40p03-20d.pdf Size:282K _upd-mosfet

AM40P06-135P
AM40P06-135P

Analog Power AM40P03-20D P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID(A) • Low r trench technology DS(on) 20 @ VGS = -10V -41 • Low thermal impedance -30 35 @ VGS = -4.5V -31 • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

 4.5. am40p03-34d.pdf Size:85K _upd-mosfet

AM40P06-135P
AM40P06-135P

Analog Power AM40P03-34D P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m(Ω) ID (A) dissipation. Typical applications are DC-DC 34 @ VGS = -10V 32 converters and power management in portable and -30 battery-powered produ

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


AM40P06-135P
  AM40P06-135P
  AM40P06-135P
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: WMH07N65C2 | WMG07N65C2 | WMP07N65C2 | WMO07N65C2 | WMM07N65C2 | WML07N65C2 | TP0610T | ME7170-G | LTP70N06 | HY1707PM | HY1707PS | HY1707MF | HY1707I | HY1707B | HY1707M |

 

 

 
Back to Top