Справочник MOSFET. AM40P06-135P

 

AM40P06-135P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AM40P06-135P
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 19 nC
   trⓘ - Время нарастания: 9 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для AM40P06-135P

 

 

AM40P06-135P Datasheet (PDF)

 ..1. Size:117K  analog power
am40p06-135p.pdf

AM40P06-135P AM40P06-135P

Analog Power AM40P06-135PP-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 135 @ VGS = -10Vconverters and power management in portable and -60-39a150 @ VGS = -4.5V

 ..2. Size:817K  cn vbsemi
am40p06-135p.pdf

AM40P06-135P AM40P06-135P

AM40P06-135Pwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY VDS (V) RDS(on) () TrenchFET Power MOSFETID (A) Qg (Typ) 100 % UIS Tested0.062 at VGS = - 10 V - 20- 60 12.50.074 at VGS = - 4.5 V - 15 APPLICATIONS Load SwitchSTO-220ABGDG D STop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParamet

 8.1. Size:139K  analog power
am40p02-20d.pdf

AM40P06-135P AM40P06-135P

Analog Power AM40P02-20DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making VDS (V) rDS(on) m() ID (A)this device ideal for use in power management 20 @ VGS = -4.5V 41circuitry. Typical applications are PWMDC-DC -20converters, power manageme

 8.2. Size:233K  analog power
am40p04-20de.pdf

AM40P06-135P AM40P06-135P

Analog Power AM40P04-20DEP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 30 @ VGS = -10V 36converters and power management in portable and -40battery-powered prod

 8.3. Size:85K  analog power
am40p03-34d.pdf

AM40P06-135P AM40P06-135P

Analog Power AM40P03-34DP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 34 @ VGS = -10V 32converters and power management in portable and -30battery-powered produ

 8.4. Size:308K  analog power
am40p03-20i.pdf

AM40P06-135P AM40P06-135P

Analog Power AM40P03-20IP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)20 @ VGS = -10V -41 Low thermal impedance -3035 @ VGS = -4.5V -31 Fast switching speed Typical Applications: TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO

 8.5. Size:282K  analog power
am40p03-20d.pdf

AM40P06-135P AM40P06-135P

Analog Power AM40P03-20DP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)20 @ VGS = -10V -41 Low thermal impedance -3035 @ VGS = -4.5V -31 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

 8.6. Size:1449K  cn vbsemi
am40p03-20d.pdf

AM40P06-135P AM40P06-135P

AM40P03-20Dwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFET

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