AM40P10-200P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM40P10-200P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 27 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 107 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.265 Ohm

Encapsulados: TO-220AB

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AM40P10-200P datasheet

 ..1. Size:296K  analog power
am40p10-200p.pdf pdf_icon

AM40P10-200P

Analog Power AM40P10-200P P-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 265 @ VGS = -10V Low thermal impedance -100 -27a 280 @ VGS = -5.5V Fast switching speed Typical Applications White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion C

 9.1. Size:307K  analog power
am40p20-150pcfm.pdf pdf_icon

AM40P10-200P

Analog Power AM40P20-150PCFM P-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 150 @ VGS = -10V -16.3 Low thermal impedance -200 280 @ VGS = -5.5V -12.0 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits A

 9.2. Size:117K  analog power
am40p06-135p.pdf pdf_icon

AM40P10-200P

Analog Power AM40P06-135P P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 135 @ VGS = -10V converters and power management in portable and -60 -39a 150 @ VGS = -4.5V

 9.3. Size:139K  analog power
am40p02-20d.pdf pdf_icon

AM40P10-200P

Analog Power AM40P02-20D P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making VDS (V) rDS(on) m( ) ID (A) this device ideal for use in power management 20 @ VGS = -4.5V 41 circuitry. Typical applications are PWMDC-DC -20 converters, power manageme

Otros transistores... AM40N10-30I, AM40N20-180P, AM40P02-20D, AM40P03-20D, AM40P03-20I, AM40P03-34D, AM40P04-20DE, AM40P06-135P, 18N50, AM40P20-150PCFM, AM4302N, AM4362N, AM4380N, AM4390N, AM4392N, AM4394N, AM4396N