AM40P10-200P Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AM40P10-200P
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 27 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 22 nC
trⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 107 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.265 Ohm
Тип корпуса: TO-220AB
- подбор MOSFET транзистора по параметрам
AM40P10-200P Datasheet (PDF)
am40p10-200p.pdf

Analog Power AM40P10-200PP-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)265 @ VGS = -10V Low thermal impedance -100-27a280 @ VGS = -5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion C
am40p20-150pcfm.pdf

Analog Power AM40P20-150PCFMP-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)150 @ VGS = -10V -16.3 Low thermal impedance -200280 @ VGS = -5.5V -12.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits A
am40p06-135p.pdf

Analog Power AM40P06-135PP-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 135 @ VGS = -10Vconverters and power management in portable and -60-39a150 @ VGS = -4.5V
am40p02-20d.pdf

Analog Power AM40P02-20DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making VDS (V) rDS(on) m() ID (A)this device ideal for use in power management 20 @ VGS = -4.5V 41circuitry. Typical applications are PWMDC-DC -20converters, power manageme
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: HYG800P10LR1D | FDPF8N50NZU | KNB1906A | SDF120JDA-D
History: HYG800P10LR1D | FDPF8N50NZU | KNB1906A | SDF120JDA-D



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