ITF87068SQT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ITF87068SQT
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 2 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 9 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.5 V
   Carga de la puerta (Qg): 28 nC
   Tiempo de subida (tr): 110 nS
   Conductancia de drenaje-sustrato (Cd): 685 pF
   Resistencia entre drenaje y fuente RDS(on): 0.015 Ohm
   Paquete / Cubierta: TSSOP8

Búsqueda de reemplazo de MOSFET ITF87068SQT

ITF87068SQT Datasheet (PDF)

..1. Size:196K intersil
itf87068sqt.pdf

ITF87068SQTData Sheet March 2000 File Number 4811.29A, 20V, 0.015 Ohm, P-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.015, VGS = -4.5VPackaging- rDS(ON) = 0.016, VGS = -4.0VTSSOP-8- rDS(ON) = 0.023, VGS = -2.5V5 2.5V Gate Drive Capability1 Gate to Source Protection Diode243 Simulation Models- Temperatur

8.1. Size:201K intersil
itf87008dqt.pdf

ITF87008DQTData Sheet March 2000 File Number 4814.27.0A, 20V, 0.023 Ohm, Dual N-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.023, VGS = 4.5VPackaging- rDS(ON) = 0.024, VGS = 4.0VTSSOP-8- rDS(ON) = 0.029, VGS = 2.5V 2.5 Volt Gate Drive Capability5 Gate to Source Protection Diode1 Simulation Models243- T

8.2. Size:236K intersil
itf87056dqt.pdf

ITF87056DQTData Sheet March 2000 File Number 4813.25A, 20V, 0.045 Ohm, Dual P-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.045, VGS = -4.5VPackaging- rDS(ON) = 0.048, VGS = -4.0VTSSOP-8- rDS(ON) = 0.077, VGS = -2.5V 2.5V Gate Drive Capability5 Gate to Source Protection Diode1 Simulation Models243- Temp

8.3. Size:186K intersil
itf87052svt.pdf

ITF87052SVTData Sheet March 2000 File Number 4800.33A, 20V, 0.115 Ohm, P-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.115, VGS = -4.5VPackaging- rDS(ON) = 0.120, VGS = -4.0VTSOP-6- rDS(ON) = 0.190, VGS = -2.5V 2.5 V Gate Drive Capability Small Profile Package41 Gate to Source Protection Diode23 Simula

8.4. Size:173K intersil
itf87072dk8t.pdf

ITF87072DK8TTMData Sheet March 2000 File Number 4812.36A, 20V, 0.037 Ohm, Dual P-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = -4.5VPackaging- rDS(ON) = 0.039, VGS = -4.0VSO8 (JEDEC MS-012AA)- rDS(ON) = 0.059, VGS = -2.5V Gate to Source Protection DiodeBRANDING DASH Simulation Models- Temperature Compen

8.5. Size:179K intersil
itf87012svt.pdf

ITF87012SVTData Sheet March 2000 File Number 4810.26A, 20V, 0.035 Ohm, N-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.035, VGS = 4.5VPackaging- rDS(ON) = 0.038, VGS = 4.0VTSOP-6- rDS(ON) = 0.045, VGS = 2.5V 2.5 V Gate Drive Capability Small Profile Package41 Gate to Source Protection Diode23 Simulatio

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