ITF87068SQT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ITF87068SQT  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 685 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: TSSOP8

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ITF87068SQT datasheet

 ..1. Size:196K  intersil
 itf87068sqt.pdf pdf_icon

ITF87068SQT

ITF87068SQT Data Sheet March 2000 File Number 4811.2 9A, 20V, 0.015 Ohm, P-Channel, Features 2.5V Specified Power MOSFET Ultra Low On-Resistance - rDS(ON) = 0.015 , VGS = -4.5V Packaging - rDS(ON) = 0.016 , VGS = -4.0V TSSOP-8 - rDS(ON) = 0.023 , VGS = -2.5V 5 2.5V Gate Drive Capability 1 Gate to Source Protection Diode 2 4 3 Simulation Models - Temperatur

 8.1. Size:201K  intersil
 itf87008dqt.pdf pdf_icon

ITF87068SQT

ITF87008DQT Data Sheet March 2000 File Number 4814.2 7.0A, 20V, 0.023 Ohm, Dual N-Channel, Features 2.5V Specified Power MOSFET Ultra Low On-Resistance - rDS(ON) = 0.023 , VGS = 4.5V Packaging - rDS(ON) = 0.024 , VGS = 4.0V TSSOP-8 - rDS(ON) = 0.029 , VGS = 2.5V 2.5 Volt Gate Drive Capability 5 Gate to Source Protection Diode 1 Simulation Models 2 4 3 - T

 8.2. Size:236K  intersil
 itf87056dqt.pdf pdf_icon

ITF87068SQT

ITF87056DQT Data Sheet March 2000 File Number 4813.2 5A, 20V, 0.045 Ohm, Dual P-Channel, Features 2.5V Specified Power MOSFET Ultra Low On-Resistance - rDS(ON) = 0.045 , VGS = -4.5V Packaging - rDS(ON) = 0.048 , VGS = -4.0V TSSOP-8 - rDS(ON) = 0.077 , VGS = -2.5V 2.5V Gate Drive Capability 5 Gate to Source Protection Diode 1 Simulation Models 2 4 3 - Temp

 8.3. Size:186K  intersil
 itf87052svt.pdf pdf_icon

ITF87068SQT

ITF87052SVT Data Sheet March 2000 File Number 4800.3 3A, 20V, 0.115 Ohm, P-Channel, Features 2.5V Specified Power MOSFET Ultra Low On-Resistance - rDS(ON) = 0.115 , VGS = -4.5V Packaging - rDS(ON) = 0.120 , VGS = -4.0V TSOP-6 - rDS(ON) = 0.190 , VGS = -2.5V 2.5 V Gate Drive Capability Small Profile Package 4 1 Gate to Source Protection Diode 2 3 Simula

MOSTRAR MÁS

Otros transistores... ITF86130SK8T, ITF86172SK8T, ITF86174SQT, ITF86182SK8T, ITF87008DQT, ITF87012SVT, ITF87052SVT, ITF87056DQT, IRF1010E, ITF87072DK8T, 12N65KL-TF, 20N03, 2N0609, 2SK2080, 2SK2652, 2SK2654, 2SK3530