ITF87068SQT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ITF87068SQT
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1.5 V
Максимально допустимый постоянный ток стока |Id|: 9 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 28 nC
Время нарастания (tr): 110 ns
Выходная емкость (Cd): 685 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.015 Ohm
Тип корпуса: TSSOP8
Аналог (замена) для ITF87068SQT
ITF87068SQT Datasheet (PDF)
itf87068sqt.pdf
ITF87068SQTData Sheet March 2000 File Number 4811.29A, 20V, 0.015 Ohm, P-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.015, VGS = -4.5VPackaging- rDS(ON) = 0.016, VGS = -4.0VTSSOP-8- rDS(ON) = 0.023, VGS = -2.5V5 2.5V Gate Drive Capability1 Gate to Source Protection Diode243 Simulation Models- Temperatur
itf87008dqt.pdf
ITF87008DQTData Sheet March 2000 File Number 4814.27.0A, 20V, 0.023 Ohm, Dual N-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.023, VGS = 4.5VPackaging- rDS(ON) = 0.024, VGS = 4.0VTSSOP-8- rDS(ON) = 0.029, VGS = 2.5V 2.5 Volt Gate Drive Capability5 Gate to Source Protection Diode1 Simulation Models243- T
itf87056dqt.pdf
ITF87056DQTData Sheet March 2000 File Number 4813.25A, 20V, 0.045 Ohm, Dual P-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.045, VGS = -4.5VPackaging- rDS(ON) = 0.048, VGS = -4.0VTSSOP-8- rDS(ON) = 0.077, VGS = -2.5V 2.5V Gate Drive Capability5 Gate to Source Protection Diode1 Simulation Models243- Temp
itf87052svt.pdf
ITF87052SVTData Sheet March 2000 File Number 4800.33A, 20V, 0.115 Ohm, P-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.115, VGS = -4.5VPackaging- rDS(ON) = 0.120, VGS = -4.0VTSOP-6- rDS(ON) = 0.190, VGS = -2.5V 2.5 V Gate Drive Capability Small Profile Package41 Gate to Source Protection Diode23 Simula
itf87072dk8t.pdf
ITF87072DK8TTMData Sheet March 2000 File Number 4812.36A, 20V, 0.037 Ohm, Dual P-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = -4.5VPackaging- rDS(ON) = 0.039, VGS = -4.0VSO8 (JEDEC MS-012AA)- rDS(ON) = 0.059, VGS = -2.5V Gate to Source Protection DiodeBRANDING DASH Simulation Models- Temperature Compen
itf87012svt.pdf
ITF87012SVTData Sheet March 2000 File Number 4810.26A, 20V, 0.035 Ohm, N-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.035, VGS = 4.5VPackaging- rDS(ON) = 0.038, VGS = 4.0VTSOP-6- rDS(ON) = 0.045, VGS = 2.5V 2.5 V Gate Drive Capability Small Profile Package41 Gate to Source Protection Diode23 Simulatio
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