AM4407P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM4407P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: SO-8

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AM4407P datasheet

 ..1. Size:210K  analog power
am4407p.pdf pdf_icon

AM4407P

Analog Power AM4407P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( ) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 9 @ VGS = -10V -15 -30 circuitry. Typical applications are PWMDC-DC 13 @ VGS = -4.5V -11 converter

 0.1. Size:117K  analog power
am4407pe.pdf pdf_icon

AM4407P

Analog Power AM4407PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 9 @ VGS = -10V -15 -30 converters and power management in portable and 13 @ VGS = -4.5V -11 ba

 8.1. Size:475K  ait semi
am4407.pdf pdf_icon

AM4407P

AiT Semiconductor Inc. AM4407 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4407 is the P-Channel logic enhancement 30V/-12.0A, R = 12m (typ)@V =-10V DS(ON) GS mode power field effect transistor is produced using -30V/-7.5A, R = 19m (typ)@V =-4.5V DS(ON) GS high cell density. Advanced trench technology to Super high density cell des

 9.1. Size:320K  analog power
am4401p.pdf pdf_icon

AM4407P

Analog Power AM4401P P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 160 @ VGS = -10V -3.6 Low thermal impedance -150 170 @ VGS = -5.5V -3.5 Fast switching speed Typical Applications SOIC-8 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABS

Otros transistores... AM4400N, AM4400NE, AM4401P, AM4402N, AM4403, AM4403P, AM4404N, AM4407, IRF830, AM4407PE, AM4409P, AM4415P, AM4417P, AM4420, AM4420N, AM4424N, AM4426N