All MOSFET. AM4407P Datasheet

 

AM4407P Datasheet and Replacement


   Type Designator: AM4407P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 37 nC
   tr ⓘ - Rise Time: 11 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SO-8
 

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AM4407P Datasheet (PDF)

 ..1. Size:210K  analog power
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AM4407P

Analog Power AM4407PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 9 @ VGS = -10V -15-30circuitry. Typical applications are PWMDC-DC 13 @ VGS = -4.5V -11converter

 0.1. Size:117K  analog power
am4407pe.pdf pdf_icon

AM4407P

Analog Power AM4407PEP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 9 @ VGS = -10V -15-30converters and power management in portable and 13 @ VGS = -4.5V -11ba

 8.1. Size:475K  ait semi
am4407.pdf pdf_icon

AM4407P

AiT Semiconductor Inc. AM4407 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4407 is the P-Channel logic enhancement 30V/-12.0A, R = 12m(typ)@V =-10V DS(ON) GSmode power field effect transistor is produced using -30V/-7.5A, R = 19m(typ)@V =-4.5V DS(ON) GShigh cell density. Advanced trench technology to Super high density cell des

 9.1. Size:320K  analog power
am4401p.pdf pdf_icon

AM4407P

Analog Power AM4401PP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)160 @ VGS = -10V -3.6 Low thermal impedance -150170 @ VGS = -5.5V -3.5 Fast switching speed Typical Applications: SOIC-8 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABS

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