AM4417P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM4417P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 619 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
Encapsulados: SO-8
Búsqueda de reemplazo de AM4417P MOSFET
- Selecciónⓘ de transistores por parámetros
AM4417P datasheet
am4417p.pdf
Analog Power AM4417P P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 17 @ VGS = -10V -11.1 Low thermal impedance -60 23 @ VGS = -4.5V -9.5 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM
am4415p.pdf
Analog Power AM4415P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 8.4 @ VGS = -4.5V -16 Low thermal impedance -20 10.4 @ VGS = -2.5V -14 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI
am4410n.pdf
Analog Power AM4410N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 13.5 @ VGS = 10V 13 converters and power management in portable and 30 20 @ VGS = 4.5V 11 battery
Otros transistores... AM4403, AM4403P, AM4404N, AM4407, AM4407P, AM4407PE, AM4409P, AM4415P, AON7403, AM4420, AM4420N, AM4424N, AM4426N, AM4430N, AM4431P, AM4432N, AM4434N
History: AM4396N
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