AM4417P Specs and Replacement
Type Designator: AM4417P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 619 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: SO-8
AM4417P substitution
- MOSFET ⓘ Cross-Reference Search
AM4417P datasheet
am4417p.pdf
Analog Power AM4417P P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 17 @ VGS = -10V -11.1 Low thermal impedance -60 23 @ VGS = -4.5V -9.5 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM... See More ⇒
am4415p.pdf
Analog Power AM4415P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 8.4 @ VGS = -4.5V -16 Low thermal impedance -20 10.4 @ VGS = -2.5V -14 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI... See More ⇒
am4410n.pdf
Analog Power AM4410N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 13.5 @ VGS = 10V 13 converters and power management in portable and 30 20 @ VGS = 4.5V 11 battery... See More ⇒
Detailed specifications: AM4403, AM4403P, AM4404N, AM4407, AM4407P, AM4407PE, AM4409P, AM4415P, AON7403, AM4420, AM4420N, AM4424N, AM4426N, AM4430N, AM4431P, AM4432N, AM4434N
Keywords - AM4417P MOSFET specs
AM4417P cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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