All MOSFET. AM4417P Datasheet

 

AM4417P Datasheet and Replacement


   Type Designator: AM4417P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 11.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 619 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SO-8
      - MOSFET Cross-Reference Search

 

AM4417P Datasheet (PDF)

 ..1. Size:321K  analog power
am4417p.pdf pdf_icon

AM4417P

Analog Power AM4417PP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)17 @ VGS = -10V -11.1 Low thermal impedance -6023 @ VGS = -4.5V -9.5 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

 9.1. Size:326K  analog power
am4415p.pdf pdf_icon

AM4417P

Analog Power AM4415PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)8.4 @ VGS = -4.5V -16 Low thermal impedance -2010.4 @ VGS = -2.5V -14 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

 9.2. Size:203K  analog power
am4410n.pdf pdf_icon

AM4417P

Analog Power AM4410NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 13.5 @ VGS = 10V 13converters and power management in portable and 3020 @ VGS = 4.5V 11battery

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History: SVS70R900MJE3 | HLML6401 | ZXMN4A06GT | CS3N90F | AFP4925WS | RFP10P03L | AP85T03GH-HF

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