AM4426N Todos los transistores

 ..1. Size:315K  analog power
 am4426n.pdf

Analog Power AM4426N N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 5.5 @ VGS = 4.5V 16 Low thermal impedance 20 7 @ VGS = 2.5V 12 Fast switching speed Typical Applications SO-8 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWIS

 9.1. Size:172K  analog power
 am4424n.pdf

Analog Power AM4424N N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 22 @ VGS = 4.5V 9.7 converters and power management in portable and 20 battery-powered products s

 9.2. Size:317K  analog power
 am4420n.pdf

Analog Power AM4420N N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 2.3 @ VGS = 4.5V 30 Low thermal impedance 20 2.7 @ VGS = 2.5V 28 Fast switching speed Typical Applications SO-8 Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATIN

 9.3. Size:308K  ait semi
 am4420.pdf

AiT Semiconductor Inc. AM4420 www.ait-ic.com MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4420 is the N-Channel logic enhancement 30V/13A, R = 8m @V = 10V DS(ON) GS mode power field effect transistor are produced 30V/12A, R = 12m @V = 4.5V DS(ON) GS using high cell density, This high density process Super high density cell design for extremely low