AM4426N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM4426N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.4 VQgⓘ - Carga de la puerta: 43 nC
trⓘ - Tiempo de subida: 29 nS
Cossⓘ - Capacitancia de salida: 295 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de MOSFET AM4426N
AM4426N Datasheet (PDF)
am4426n.pdf
Analog Power AM4426NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)5.5 @ VGS = 4.5V16 Low thermal impedance 207 @ VGS = 2.5V12 Fast switching speed Typical Applications: SO-8 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWIS
am4424n.pdf
Analog Power AM4424NN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 22 @ VGS = 4.5V 9.7converters and power management in portable and 20battery-powered products s
am4420n.pdf
Analog Power AM4420NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)2.3 @ VGS = 4.5V30 Low thermal impedance 202.7 @ VGS = 2.5V28 Fast switching speed Typical Applications: SO-8 Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATIN
am4420.pdf
AiT Semiconductor Inc. AM4420 www.ait-ic.com MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4420 is the N-Channel logic enhancement 30V/13A, R = 8m@V = 10V DS(ON) GSmode power field effect transistor are produced 30V/12A, R = 12m@V = 4.5V DS(ON) GSusing high cell density, This high density process Super high density cell design for extremely low
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: SML1002RCN
History: SML1002RCN
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