AM4426N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM4426N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29 nS
Cossⓘ - Capacitancia de salida: 295 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de AM4426N MOSFET
AM4426N Datasheet (PDF)
am4426n.pdf

Analog Power AM4426NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)5.5 @ VGS = 4.5V16 Low thermal impedance 207 @ VGS = 2.5V12 Fast switching speed Typical Applications: SO-8 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWIS
am4424n.pdf

Analog Power AM4424NN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 22 @ VGS = 4.5V 9.7converters and power management in portable and 20battery-powered products s
am4420n.pdf

Analog Power AM4420NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)2.3 @ VGS = 4.5V30 Low thermal impedance 202.7 @ VGS = 2.5V28 Fast switching speed Typical Applications: SO-8 Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATIN
am4420.pdf

AiT Semiconductor Inc. AM4420 www.ait-ic.com MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4420 is the N-Channel logic enhancement 30V/13A, R = 8m@V = 10V DS(ON) GSmode power field effect transistor are produced 30V/12A, R = 12m@V = 4.5V DS(ON) GSusing high cell density, This high density process Super high density cell design for extremely low
Otros transistores... AM4407P , AM4407PE , AM4409P , AM4415P , AM4417P , AM4420 , AM4420N , AM4424N , 2N7002 , AM4430N , AM4431P , AM4432N , AM4434N , AM4435 , AM4436N , AM4438N , AM4460NT .
History: HTD2K4P15T | NTJS4405NT1 | NCE85H21C | AOB409L | SHD225628 | HM1607D
History: HTD2K4P15T | NTJS4405NT1 | NCE85H21C | AOB409L | SHD225628 | HM1607D



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