AM4426N
MOSFET. Datasheet pdf. Equivalent
Type Designator: AM4426N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.4
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 43
nC
trⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 295
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055
Ohm
Package:
SO-8
AM4426N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM4426N
Datasheet (PDF)
..1. Size:315K analog power
am4426n.pdf
Analog Power AM4426NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)5.5 @ VGS = 4.5V16 Low thermal impedance 207 @ VGS = 2.5V12 Fast switching speed Typical Applications: SO-8 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWIS
9.1. Size:172K analog power
am4424n.pdf
Analog Power AM4424NN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 22 @ VGS = 4.5V 9.7converters and power management in portable and 20battery-powered products s
9.2. Size:317K analog power
am4420n.pdf
Analog Power AM4420NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)2.3 @ VGS = 4.5V30 Low thermal impedance 202.7 @ VGS = 2.5V28 Fast switching speed Typical Applications: SO-8 Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATIN
9.3. Size:308K ait semi
am4420.pdf
AiT Semiconductor Inc. AM4420 www.ait-ic.com MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4420 is the N-Channel logic enhancement 30V/13A, R = 8m@V = 10V DS(ON) GSmode power field effect transistor are produced 30V/12A, R = 12m@V = 4.5V DS(ON) GSusing high cell density, This high density process Super high density cell design for extremely low
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