AM4431P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AM4431P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 21 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 64 nS
   Cossⓘ - Capacitancia de salida: 1415 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET AM4431P

AM4431P Datasheet (PDF)

..1. Size:322K analog power
am4431p.pdf

Analog Power AM4431PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)5 @ VGS = -10V -21 Low thermal impedance -307 @ VGS = -4.5V -17 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RA

9.1. Size:392K analog power
am4437p.pdf

Analog Power AM4437PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)10.5 @ VGS = -10V -14 Low thermal impedance -3016 @ VGS = -4.5V -11 Fast switching speed Typical Applications: SO-8 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OT

9.2. Size:159K analog power
am4434n.pdf

Analog Power AM4434NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 6 @ VGS = 4.5V 18.630battery-powered products such

9.3. Size:87K analog power
am4438n.pdf

Analog Power AM4438NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 32 @ VGS = 4.5V 8.1converters and power management in portable and 30battery-powered products su

9.4. Size:326K analog power
am4432n.pdf

Analog Power AM4432NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)11 @ VGS = 4.5V13.8 Low thermal impedance 3012 @ VGS = 2.5V13.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

9.5. Size:310K analog power
am4436n.pdf

Analog Power AM4436NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)4.6 @ VGS = 10V22 Low thermal impedance 306.8 @ VGS = 4.5V18 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

9.6. Size:160K analog power
am4430n.pdf

Analog Power AM4430NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 13.5 @ VGS = 4.5V 13converters and power management in portable and 3020 @ VGS = 2.5V 11batter

9.7. Size:327K ait semi
am4435.pdf

AiT Semiconductor Inc. AM4435 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4435 is the P-Channel logic enhancement -30V/-8.0A, R =16m(typ)@V =-10V DS(ON) GSmode power field effect transistor is produced -30V/-5.0A, R =26m(typ)@V =-4.5V DS(ON) GSusing high cell density. Advanced trench Super high density cell design for extremel

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