AM4431P. Аналоги и основные параметры

Наименование производителя: AM4431P

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 3.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 64 ns

Cossⓘ - Выходная емкость: 1415 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm

Тип корпуса: SO-8

Аналог (замена) для AM4431P

- подборⓘ MOSFET транзистора по параметрам

 

AM4431P даташит

 ..1. Size:322K  analog power
am4431p.pdfpdf_icon

AM4431P

Analog Power AM4431P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 5 @ VGS = -10V -21 Low thermal impedance -30 7 @ VGS = -4.5V -17 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RA

 9.1. Size:392K  analog power
am4437p.pdfpdf_icon

AM4431P

Analog Power AM4437P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 10.5 @ VGS = -10V -14 Low thermal impedance -30 16 @ VGS = -4.5V -11 Fast switching speed Typical Applications SO-8 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OT

 9.2. Size:159K  analog power
am4434n.pdfpdf_icon

AM4431P

Analog Power AM4434N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 6 @ VGS = 4.5V 18.6 30 battery-powered products such

 9.3. Size:87K  analog power
am4438n.pdfpdf_icon

AM4431P

Analog Power AM4438N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( ) ID (A) dissipation. Typical applications are DC-DC 32 @ VGS = 4.5V 8.1 converters and power management in portable and 30 battery-powered products su

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