2SJ461 Todos los transistores

 

2SJ461 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ461

Código: H19

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.2 W

Tensión drenaje-fuente (Vds): 50 V

Corriente continua de drenaje (Id): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 75 Ohm

Empaquetado / Estuche: SC59

Búsqueda de reemplazo de MOSFET 2SJ461

 

2SJ461 Datasheet (PDF)

1.1. 2sj461a.pdf Size:723K _upd

2SJ461
2SJ461

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461A P-CHANNEL MOSFET FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ461A is a switching device which can be driven directly by a 2.5 V power source. The 2SJ461A has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. FEATURES PACKAGE DRAWING (Unit: mm) • Can be driven by a

1.2. 2sj461.pdf Size:711K _nec

2SJ461
2SJ461

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ461 is a switching device which can be driven directly 2.8 0.2 by a 2.5 V power source. +0.1 0.65 0.15 1.5 The 2SJ461 has excellent switching characteristics and is suitable for use as a high-speed switching device in dig

 1.3. 2sj461.pdf Size:1130K _kexin

2SJ461
2SJ461

SMD Type MOSFET P-Channel MOSFET 2SJ461 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-50V 1 2 ● ID =-0.1 A +0.1 +0.05 0.95 -0.1 0.1 -0.01 ● RDS(ON) < 50Ω (VGS =-4V) 1.9+0.1 -0.1 ● RDS(ON) < 100Ω (VGS =-2.5V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS

1.4. 2sj461-3.pdf Size:1139K _kexin

2SJ461
2SJ461

SMD Type MOSFET P-Channel MOSFET 2SJ461 SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) =-50V 1 2 ● ID =-0.1 A +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 ● RDS(ON) < 50Ω (VGS =-4V) 1.9 -0.2 ● RDS(ON) < 100Ω (VGS =-2.5V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltag

Otros transistores... 2SJ411 , 2SJ424 , 2SJ425 , 2SJ44 , 2SJ448 , 2SJ449 , 2SJ45 , 2SJ460 , IRF460 , 2SJ462 , 2SJ463 , 2SJ471 , 2SJ479 , 2SJ483 , 2SJ484 , 2SJ486 , 2SJ496 .

 
Back to Top

 


2SJ461
  2SJ461
  2SJ461
  2SJ461
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SIZ710DT | SIZ704DT | SIZ702DT | SIZ342DT | SIZ340DT | SIZ300DT | SIX3439K | SISS40DN | SISS23DN | SISA18DN | SISA18ADN | SISA14DN | SISA12DN | SISA12ADN | SISA10DN |

 

 

 
Back to Top