DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ461P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGPACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ461 is a switching device which can be driven directly 2.8 0.2by a 2.5 V power source. +0.10.65 0.151.5 The 2SJ461 has excellent switching characteristics and is suitable for use as a high-speed switching device

SMD Type MOSFETP-Channel MOSFET2SJ461SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) =-50V1 2 ID =-0.1 A+0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON) 50 (VGS =-4V) 1.9+0.1-0.1 RDS(ON) 100 (VGS =-2.5V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ461AP-CHANNEL MOSFET FOR HIGH SPEED SWITCHINGDESCRIPTION The 2SJ461A is a switching device which can be driven directly by a 2.5 V power source. The 2SJ461A has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. FEATURES PACKAGE DRAWING (Unit: mm) Can be driven by a

SMD Type MOSFETP-Channel MOSFET2SJ461SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) =-50V1 2 ID =-0.1 A+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 50 (VGS =-4V)1.9 -0.2 RDS(ON) 100 (VGS =-2.5V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltag

2SJ465 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ465 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 2.5 V gate drive Low drain-source ON resistance : R = 0.54 (typ.) DS (ON) High forward transfer admittance : |Y | = 1.7 S (typ.) fs Low leakage current : I = -100 A (max) DSS (V = -16 V) DS Enhance

Ordering number:ENN5491BP-Channel Silicon MOSFET2SJ466Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2128 4V drive.[2SJ466] Enables simplified fabrication, high-density mount-8.27.8ing, and miniaturization in end products due to the6.20.63surface mountable package.1 20.31

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ462P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR HIGH SPEED SWITCHINGDESCRIPTION Package Drawings (unit : mm)The 2SJ462 is a switching device which can be driven directly5.7 0.1by an IC operating at 3 V.1.5 0.12.0 0.2The 2SJ462 features a low on-state resistance and can bedriven by a low voltage power source, so it is suitable for

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ463AP-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGPACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ463A is a switching device which can be driven directly 2.1 0.1by a 2.5 V power source. 1.25 0.1 The 2SJ463A has excellent switching characteristics, and is suitable for use as a high-speed switching device in digita