AM4481P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM4481P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.126 Ohm
Paquete / Cubierta: SOIC-8
Búsqueda de reemplazo de AM4481P MOSFET
AM4481P Datasheet (PDF)
am4481p.pdf

Analog Power AM4481PP-Channel 80-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 126 @ VGS = -10V 6.8converters and power management in portable and -80battery-powered product
am4482n.pdf

Analog Power AM4482NN-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)36 @ VGS = 10V7.6 Low thermal impedance 8043 @ VGS = 4.5V7.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R
am4480n.pdf

Analog Power AM4480NN-Channel 80-V (D-S) MOSFET PRODUCT SUMMARYKey Features:rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)41 @ VGS = 10V7.1 Low thermal impedance8057 @ VGS = 4.5V6.1 Fast switching speedTypical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion CircuitsABSOLUTE MAXIMUM RATINGS
Otros transistores... AM4438N , AM4460NT , AM4462N , AM4463P , AM4466N , AM4470N , AM4472N , AM4480N , IRF640 , AM4482N , AM4490N , AM4490NE , AM4492N , AM4494N , AM4499P , AM4502AC , AM4502C .
History: IRF9Z34SPBF
History: IRF9Z34SPBF



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