AM4481P
MOSFET. Datasheet pdf. Equivalent
Type Designator: AM4481P
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 6.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 18
nC
trⓘ - Rise Time: 10
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.126
Ohm
Package:
SOIC-8
AM4481P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM4481P
Datasheet (PDF)
..1. Size:172K analog power
am4481p.pdf
Analog Power AM4481PP-Channel 80-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 126 @ VGS = -10V 6.8converters and power management in portable and -80battery-powered product
9.1. Size:318K analog power
am4482n.pdf
Analog Power AM4482NN-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)36 @ VGS = 10V7.6 Low thermal impedance 8043 @ VGS = 4.5V7.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R
9.2. Size:234K analog power
am4480n.pdf
Analog Power AM4480NN-Channel 80-V (D-S) MOSFET PRODUCT SUMMARYKey Features:rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)41 @ VGS = 10V7.1 Low thermal impedance8057 @ VGS = 4.5V6.1 Fast switching speedTypical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion CircuitsABSOLUTE MAXIMUM RATINGS
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