AM4512AC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AM4512AC
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.6 V
   Qgⓘ - Carga de la puerta: 6.3 nC
   trⓘ - Tiempo de subida: 4 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SOIC-8

Búsqueda de reemplazo de MOSFET AM4512AC

AM4512AC Datasheet (PDF)

..1. Size:223K analog power
am4512ac.pdf

Analog Power AM4512ACP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 60 @ VGS = 4.5V 5.030battery-powered product

8.1. Size:259K analog power
am4512ce.pdf

Analog Power AM4512CEP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 40 @ V = 4.5V 6.0GSconverters and power management in portable and 30battery-powered pro

8.2. Size:237K analog power
am4512c.pdf

Analog Power AM4512CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 40 @ V = 4.5V 6.0GS30circuitry. Typical applications are PWMDC-DC 31 @ V = 10V 6.9GSconv

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