AM4512AC
MOSFET. Datasheet pdf. Equivalent
Type Designator: AM4512AC
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.6
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.3
nC
trⓘ - Rise Time: 4
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06
Ohm
Package:
SOIC-8
AM4512AC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM4512AC
Datasheet (PDF)
..1. Size:223K analog power
am4512ac.pdf
Analog Power AM4512ACP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 60 @ VGS = 4.5V 5.030battery-powered product
8.1. Size:259K analog power
am4512ce.pdf
Analog Power AM4512CEP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 40 @ V = 4.5V 6.0GSconverters and power management in portable and 30battery-powered pro
8.2. Size:237K analog power
am4512c.pdf
Analog Power AM4512CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 40 @ V = 4.5V 6.0GS30circuitry. Typical applications are PWMDC-DC 31 @ V = 10V 6.9GSconv
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