IXBH20N160 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXBH20N160
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 200 W
Tensión drenaje-fuente (Vds): 1600 V
Corriente continua de drenaje (Id): 20 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 0.33 Ohm
Empaquetado / Estuche: TO247
Búsqueda de reemplazo de MOSFET IXBH20N160
IXBH20N160 Datasheet (PDF)
1.1. ixbh20n160.pdf 
Size:60K _igbt
High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 20N160 IC25 = 20 A MOS Transistor VCE(sat) = 4.7 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 20N140 20N160 • International standard package VCES TJ = 25°C to 150°C 140
2.1. ixbh20n140-160.pdf Size:62K _ixys
High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 20N160 IC25 = 20 A MOS Transistor VCE(sat) = 4.7 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 20N140 20N160 • International standard package VCES TJ = 25°C to 150°C 140
2.2. ixbh20n140.pdf Size:60K _igbt
High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 20N160 IC25 = 20 A MOS Transistor VCE(sat) = 4.7 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 20N140 20N160 • International standard package VCES TJ = 25°C to 150°C 140
Otros transistores... ITF87052SVT , ITF87056DQT , ITF87068SQT , ITF87072DK8T , IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH20N140 , J112 , IXBH40N140 , IXBH40N160 , IXBH9N140 , IXBH9N160 , IXBJ40N140 , IXBJ40N160 , IXBT15N170 , IXFH10N100 .
