AM4998N Todos los transistores

 

AM4998N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM4998N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: SOIC-8

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AM4998N Datasheet (PDF)

 ..1. Size:194K  analog power
am4998n.pdf

AM4998N
AM4998N

Analog Power AM4998NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat 32 @ VGS = 4.5V 6.5dissipation. Typical applications are DC-DC 30converters and power management in portable and 40 @ VGS = 2.5V 5.8batte

 9.1. Size:318K  analog power
am4990ne.pdf

AM4998N
AM4998N

Analog Power AM4990NEDual N-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)81 @ VGS = 10V4.2 Low thermal impedance 10092 @ VGS = 4.5V4.0 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

 9.2. Size:160K  analog power
am4990n.pdf

AM4998N
AM4998N

Analog Power AM4990NDual N-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 81 @ VGS = 10V 4.2converters and power management in portable and 100battery-powered pro

 9.3. Size:320K  analog power
am4992n.pdf

AM4998N
AM4998N

Analog Power AM4992NN-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)430 @ VGS = 10V1.8 Low thermal impedance 100480 @ VGS = 4.5V1.7 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXTC220N075T

 

 
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History: IXTC220N075T

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