AM4998N. Аналоги и основные параметры

Наименование производителя: AM4998N

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm

Тип корпуса: SOIC-8

Аналог (замена) для AM4998N

- подборⓘ MOSFET транзистора по параметрам

 

AM4998N даташит

 ..1. Size:194K  analog power
am4998n.pdfpdf_icon

AM4998N

Analog Power AM4998N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat 32 @ VGS = 4.5V 6.5 dissipation. Typical applications are DC-DC 30 converters and power management in portable and 40 @ VGS = 2.5V 5.8 batte

 9.1. Size:318K  analog power
am4990ne.pdfpdf_icon

AM4998N

Analog Power AM4990NE Dual N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 81 @ VGS = 10V 4.2 Low thermal impedance 100 92 @ VGS = 4.5V 4.0 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

 9.2. Size:160K  analog power
am4990n.pdfpdf_icon

AM4998N

Analog Power AM4990N Dual N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( ) ID (A) dissipation. Typical applications are DC-DC 81 @ VGS = 10V 4.2 converters and power management in portable and 100 battery-powered pro

 9.3. Size:320K  analog power
am4992n.pdfpdf_icon

AM4998N

Analog Power AM4992N N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 430 @ VGS = 10V 1.8 Low thermal impedance 100 480 @ VGS = 4.5V 1.7 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

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