AM50N08-14D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM50N08-14D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 55 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 471 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: TO-252

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AM50N08-14D datasheet

 ..1. Size:299K  analog power
 am50n08-14d.pdf pdf_icon

AM50N08-14D

Analog Power AM50N08-14D N-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 11 @ VGS = 10V 55 Low thermal impedance 80 13 @ VGS = 4.5V 51 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 8.1. Size:289K  analog power
 am50n06-15d.pdf pdf_icon

AM50N08-14D

Analog Power AM50N06-15D N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 13 @ VGS = 10V 51 Low thermal impedance 60 18 @ VGS = 4.5V 44 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 8.2. Size:106K  analog power
 am50n06-20d.pdf pdf_icon

AM50N08-14D

Analog Power AM50N06-20D N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 20 @ VGS = 10V 41 converters and power management in portable and 60 29 @ VGS = 4.5V 34 batte

 8.3. Size:146K  analog power
 am50n03-12i.pdf pdf_icon

AM50N08-14D

Analog Power AM50N03-12I N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( ) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 13 @ VGS = 10V 51 circuitry. Typical applications are PWMDC-DC 30 20 @ VGS = 4.5V 41 converters,

MOSTRAR MÁS

Otros transistores... AM4990N, AM4990NE, AM4992N, AM4998N, AM50N03-12D, AM50N03-12I, AM50N06-15D, AM50N06-20D, IRF830, AM50N10-14I, AM50N10-18D, AM50N10-55FP, AM50P02-09D, AM50P02-16D, AM50P03-09D, AM50P04-16PCFM, AM50P04-20D