AM50N08-14D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AM50N08-14D
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 55 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 471 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
Тип корпуса: TO-252
Аналог (замена) для AM50N08-14D
AM50N08-14D Datasheet (PDF)
am50n08-14d.pdf
Analog Power AM50N08-14DN-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)11 @ VGS = 10V55 Low thermal impedance 8013 @ VGS = 4.5V51 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
am50n06-15d.pdf
Analog Power AM50N06-15DN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)13 @ VGS = 10V51 Low thermal impedance 6018 @ VGS = 4.5V44 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
am50n06-20d.pdf
Analog Power AM50N06-20DN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 20 @ VGS = 10V 41converters and power management in portable and 6029 @ VGS = 4.5V 34batte
am50n03-12i.pdf
Analog Power AM50N03-12IN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 13 @ VGS = 10V 51circuitry. Typical applications are PWMDC-DC 3020 @ VGS = 4.5V 41converters,
am50n03-12d.pdf
Analog Power AM50N03-12DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)13 @ VGS = 10V51 Low thermal impedance 3020 @ VGS = 4.5V41 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918