IXBJ40N160 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXBJ40N160
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 350 W
Tensión drenaje-fuente (Vds): 1600 V
Corriente continua de drenaje (Id): 33 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 0.24 Ohm
Empaquetado / Estuche: TO268
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IXBJ40N160 Datasheet (PDF)
1.1. ixbj40n160.pdf 
Size:60K _igbt
High Voltage BIMOSFETTM IXBJ 40N140 VCES = 1400/1600 V Monolithic Bipolar IXBJ 40N160 IC25 = 33 A MOS Transistor VCE(sat) = 7.1 V tfi = 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C 1400 1600 V G C VCGR TJ = 25°C to 150°C; RGE = 1 MW 1400 1600 V E C (TAB) VGES Continuous ±20 V VGEM Transient ±30
2.1. ixbj40n140-160.pdf Size:62K _ixys
High Voltage BIMOSFETTM IXBJ 40N140 VCES = 1400/1600 V Monolithic Bipolar IXBJ 40N160 IC25 = 33 A MOS Transistor VCE(sat) = 7.1 V tfi = 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C 1400 1600 V G C VCGR TJ = 25°C to 150°C; RGE = 1 MW 1400 1600 V E C (TAB) VGES Continuous ±20 V VGEM Transient ±30
2.2. ixbj40n140.pdf Size:60K _igbt
High Voltage BIMOSFETTM IXBJ 40N140 VCES = 1400/1600 V Monolithic Bipolar IXBJ 40N160 IC25 = 33 A MOS Transistor VCE(sat) = 7.1 V tfi = 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C 1400 1600 V G C VCGR TJ = 25°C to 150°C; RGE = 1 MW 1400 1600 V E C (TAB) VGES Continuous ±20 V VGEM Transient ±30
Otros transistores... IXBH15N170 , IXBH20N140 , IXBH20N160 , IXBH40N140 , IXBH40N160 , IXBH9N140 , IXBH9N160 , IXBJ40N140 , 2SK3568 , IXBT15N170 , IXFH10N100 , IXFH10N90 , IXFH11N80 , IXFH12N100 , IXFH12N100Q , IXFH12N90 , IXFH12N90Q .
