IXBJ40N160 Todos los transistores

 

IXBJ40N160 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXBJ40N160

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 350 W

Tensión drenaje-fuente (Vds): 1600 V

Corriente continua de drenaje (Id): 33 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.24 Ohm

Empaquetado / Estuche: TO268

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IXBJ40N160 Datasheet (PDF)

1.1. ixbj40n160.pdf Size:60K _igbt

IXBJ40N160
IXBJ40N160

High Voltage BIMOSFETTM IXBJ 40N140 VCES = 1400/1600 V Monolithic Bipolar IXBJ 40N160 IC25 = 33 A MOS Transistor VCE(sat) = 7.1 V tfi = 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C 1400 1600 V G C VCGR TJ = 25°C to 150°C; RGE = 1 MW 1400 1600 V E C (TAB) VGES Continuous ±20 V VGEM Transient ±30

2.1. ixbj40n140-160.pdf Size:62K _ixys

IXBJ40N160
IXBJ40N160

High Voltage BIMOSFETTM IXBJ 40N140 VCES = 1400/1600 V Monolithic Bipolar IXBJ 40N160 IC25 = 33 A MOS Transistor VCE(sat) = 7.1 V tfi = 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C 1400 1600 V G C VCGR TJ = 25°C to 150°C; RGE = 1 MW 1400 1600 V E C (TAB) VGES Continuous ±20 V VGEM Transient ±30

2.2. ixbj40n140.pdf Size:60K _igbt

IXBJ40N160
IXBJ40N160

High Voltage BIMOSFETTM IXBJ 40N140 VCES = 1400/1600 V Monolithic Bipolar IXBJ 40N160 IC25 = 33 A MOS Transistor VCE(sat) = 7.1 V tfi = 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C 1400 1600 V G C VCGR TJ = 25°C to 150°C; RGE = 1 MW 1400 1600 V E C (TAB) VGES Continuous ±20 V VGEM Transient ±30

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