AOB12N65 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOB12N65  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 278 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 77 nS

Cossⓘ - Capacitancia de salida: 152 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.72 Ohm

Encapsulados: TO-263

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AOB12N65 datasheet

 ..1. Size:385K  aosemi
 aot12n65 aotf12n65 aob12n65.pdf pdf_icon

AOB12N65

AOT12N65/AOTF12N65/AOB12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT12N65 & AOTF12N65 & AOB12N65 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 ..2. Size:253K  inchange semiconductor
 aob12n65.pdf pdf_icon

AOB12N65

isc N-Channel MOSFET Transistor AOB12N65 FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.72 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 0.1. Size:385K  aosemi
 aob12n65l.pdf pdf_icon

AOB12N65

AOT12N65/AOTF12N65/AOB12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT12N65 & AOTF12N65 & AOB12N65 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 0.2. Size:435K  aosemi
 aot12n65 aotf12n65 aotf12n65l aob12n65l.pdf pdf_icon

AOB12N65

AOT12N65/AOTF12N65/AOTF12N65L/AOB12N65L 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT12N65 & AOTF12N65 & AOTF12N65L & AOB12N65L have been fabricated using an advanced ID (at VGS=10V) 12A high voltage MOSFET process that is designed to deliver RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... 2N0609, 2SK2080, 2SK2652, 2SK2654, 2SK3530, 2SK3681, 3N150S, 80N08A, IRFP250, AOB2144L, IXFH10N100, IXFH10N90, IXFH11N80, IXFH12N100, IXFH12N100Q, IXFH12N90, IXFH12N90Q