AM60N10-13D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM60N10-13D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 51 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: TO-252

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AM60N10-13D datasheet

 ..1. Size:61K  analog power
 am60n10-13d.pdf pdf_icon

AM60N10-13D

Analog Power AM60N10-13D N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 13 @ VGS = 10V 51 converters and power management in portable and 100 14 @ VGS = 5.5V 49 bat

 ..2. Size:1408K  cn vbsemi
 am60n10-13d.pdf pdf_icon

AM60N10-13D

AM60N10-13D www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, un

 6.1. Size:288K  analog power
 am60n10-70p.pdf pdf_icon

AM60N10-13D

Analog Power AM60N10-70P N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 78 @ VGS = 10V Low thermal impedance 100 51a 92 @ VGS = 5.5V Fast switching speed Typical Applications White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circuits

 6.2. Size:271K  analog power
 am60n10-70pcfm.pdf pdf_icon

AM60N10-13D

Analog Power AM60N10-70PCFM N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V converters and power management in portable and 100 51a 92 @ VGS = 4.5V

MOSTRAR MÁS

Otros transistores... AM5920N, AM5922N, AM5931P, AM5932N, AM60N02-09D, AM60N02-10D, AM60N03-09D, AM60N04-12D, IRF640N, AM60N10-70P, AM60N10-70PCFM, AM60P04-10D, AM6378, AM6401, AM6411P, AM6415, AM6441P