Справочник MOSFET. AM60N10-13D

 

AM60N10-13D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AM60N10-13D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 51 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 60 nC
   trⓘ - Время нарастания: 10 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для AM60N10-13D

 

 

AM60N10-13D Datasheet (PDF)

 ..1. Size:61K  analog power
 am60n10-13d.pdf

AM60N10-13D AM60N10-13D

Analog Power AM60N10-13DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 13 @ VGS = 10V 51converters and power management in portable and 10014 @ VGS = 5.5V 49bat

 ..2. Size:1408K  cn vbsemi
 am60n10-13d.pdf

AM60N10-13D AM60N10-13D

AM60N10-13Dwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, un

 6.1. Size:288K  analog power
 am60n10-70p.pdf

AM60N10-13D AM60N10-13D

Analog Power AM60N10-70PN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)78 @ VGS = 10V Low thermal impedance 10051a92 @ VGS = 5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circuits

 6.2. Size:271K  analog power
 am60n10-70pcfm.pdf

AM60N10-13D AM60N10-13D

Analog Power AM60N10-70PCFMN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10Vconverters and power management in portable and 10051a92 @ VGS = 4.5V

 6.3. Size:1371K  cn vbsemi
 am60n10-70pc.pdf

AM60N10-13D AM60N10-13D

AM60N10-70PCwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.034 at VGS = 10 V10050aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDTO-220 FULLPAKGSSDGN-Channel MOSFETABSOLUTE M

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