AM6968N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM6968N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: TSSOP-8

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AM6968N datasheet

 ..1. Size:137K  analog power
 am6968n.pdf pdf_icon

AM6968N

Analog Power AM6968N Dual N-Channel Logical Level MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.022 @ VGS = 4.5 V 6.8 battery-powered pr

 0.1. Size:293K  analog power
 am6968nh.pdf pdf_icon

AM6968N

Analog Power AM6968NH Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 24 @ VGS = 4.5V 6.5 Low thermal impedance 20 32 @ VGS = 2.5V 5.6 Fast switching speed Typical Applications Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATING

 0.2. Size:247K  analog power
 am6968ne.pdf pdf_icon

AM6968N

Analog Power AM6968NE Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) (m ) VDS (V) ID(A) Key Features 26 @ VGS = 4.5V 6.8 Low r trench technology DS(on) 35 @ VGS = 2.5V 20 5.8 Low thermal impedance 46 @ VGS = 1.8V 4.7 Fast switching speed Typical Applications Battery Powered Instruments Portable Computing Mobile Phones GPS Unit

Otros transistores... AM6612NE, AM6802, AM6920NH, AM6921P, AM6922NH, AM6923P, AM6924NHE, AM6930N, IRLB4132, AM6968NE, AM6968NH, AM7000N, AM7001P, AM70N03-04D, AM70N03-08D, AM70N04-06D, AM70N10-44P