AM6968N
MOSFET. Datasheet pdf. Equivalent
Type Designator: AM6968N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7
V
|Id|ⓘ - Maximum Drain Current: 6.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 13.4
nC
trⓘ - Rise Time: 25
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022
Ohm
Package:
TSSOP-8
AM6968N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM6968N
Datasheet (PDF)
..1. Size:137K analog power
am6968n.pdf
Analog Power AM6968NDual N-Channel Logical Level MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.022 @ VGS = 4.5 V 6.8battery-powered pr
0.1. Size:293K analog power
am6968nh.pdf
Analog Power AM6968NHDual N-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)24 @ VGS = 4.5V6.5 Low thermal impedance 2032 @ VGS = 2.5V5.6 Fast switching speed Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATING
0.2. Size:247K analog power
am6968ne.pdf
Analog Power AM6968NEDual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) (m) VDS (V) ID(A) Key Features:26 @ VGS = 4.5V 6.8 Low r trench technologyDS(on)35 @ VGS = 2.5V 20 5.8 Low thermal impedance46 @ VGS = 1.8V 4.7 Fast switching speedTypical Applications: Battery Powered Instruments Portable Computing Mobile Phones GPS Unit
Datasheet: WPB4002
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