IRFH7911PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH7911PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0086 Ohm

Encapsulados: PQFN5X6

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IRFH7911PBF datasheet

 ..1. Size:315K  international rectifier
irfh7911pbf.pdf pdf_icon

IRFH7911PBF

IRFH7911PbF HEXFET Power MOSFET Q1 Q2 VDS 30 30 V RDS(on) max 8.6 3.0 m (@VGS = 10V) Qg (typical) 8.3 34 nC ID 13 28 A (@TA = 25 C) Dual PQFN 5X6 mm Applications Control and synchronous MOSFET for buck converters Features and Benefits Benefits Features Increased power density Control and synchronous FET in one package (50% vs two PQFN 5x6) Low charge control MOSF

 7.1. Size:288K  1
irfh7914trpbf.pdf pdf_icon

IRFH7911PBF

IRFH7914PbF HEXFET Power MOSFET Applications l Control MOSFET of Sync-Buck Converters VDSS RDS(on) max Qg used for Notebook Processor Power 8.7m 30V @VGS = 10V 8.3nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-

 7.2. Size:288K  international rectifier
irfh7914pbf.pdf pdf_icon

IRFH7911PBF

IRFH7914PbF HEXFET Power MOSFET Applications l Control MOSFET of Sync-Buck Converters VDSS RDS(on) max Qg used for Notebook Processor Power 8.7m 30V @VGS = 10V 8.3nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-

 8.1. Size:260K  1
irfh7934trpbf.pdf pdf_icon

IRFH7911PBF

IRFH7934PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power 30V 3.5m @VGS = 10V 20nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG PQFN 5X6 mm l L

Otros transistores... AM7331PE, AM7332N, AM7333P, AM7333PE, AM7334N, AM7335P, AM7336N, AM7338N, IRFZ24N, IRFH7914PBF, IRFH7921PBF, IRFH7932PBF, IRFH7934PBF, IRFH7936PBF, IRFH8201, IRFH8202, IRFH8303