IRFH8330PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH8330PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3.3 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 17 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.35 V

Carga de compuerta (Qg): 9.3 nC

Tiempo de elevación (tr): 15 nS

Conductancia de drenaje-sustrato (Cd): 250 pF

Resistencia drenaje-fuente RDS(on): 0.0066 Ohm

Empaquetado / Estuche: PQFN5X6

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IRFH8330PBF Datasheet (PDF)

1.1. irfh8330pbf.pdf Size:227K _upd-mosfet

PD - 97652C IRFH8330PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 6.6 (@VGS = 10V) mΩ (@VGS = 4.5V) 9.9 Qg typ. 9.3 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance

1.2. irfh8330pbf.pdf Size:332K _international_rectifier

IRFH8330PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 6.6 (@VGS = 10V) mΩ (@VGS = 4.5V) 9.9 Qg typ. 9.3 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 3.

3.1. irfh8334pbf-1.pdf Size:236K _upd-mosfet

IRFH8334PbF-1 HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 9.0 (@VGS = 10V) mΩ (@VGS = 4.5V) 13.5 Qg typ. 7.1 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features Benefits Industry-standard pinout PQFN 5 x 6mm Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mou

3.2. irfh8337pbf.pdf Size:226K _upd-mosfet

PD - 97646C IRFH8337PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 12.8 (@VGS = 10V) mΩ (@VGS = 4.5V) 19.9 Qg typ. 4.7 nC PQFN 5X6 mm ID 16.2 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 4.7°C/W) Enable better thermal dissipation

3.3. irfh8334pbf.pdf Size:298K _international_rectifier

IRFH8334PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 9.0 (@VGS = 10V) mΩ (@VGS = 4.5V) 13.5 Qg typ. 7.1 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 4.1°C/W) Enable better thermal dissipation Low Profile (<1

3.4. irfh8337pbf.pdf Size:298K _international_rectifier

IRFH8337PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 12.8 (@VGS = 10V) mΩ (@VGS = 4.5V) 19.9 Qg typ. 4.7 nC PQFN 5X6 mm ID 16.2 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 4.7°C/W) Enable better thermal dissipation Low Profile

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