IRFH8334PBF-1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH8334PBF-1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 3.2 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 14 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2.35 V
Carga de compuerta (Qg): 7.1 nC
Tiempo de elevación (tr): 14 nS
Conductancia de drenaje-sustrato (Cd): 260 pF
Resistencia drenaje-fuente RDS(on): 0.009 Ohm
Empaquetado / Estuche: PQFN5X6
Búsqueda de reemplazo de MOSFET IRFH8334PBF-1
IRFH8334PBF-1 Datasheet (PDF)
1.1. irfh8334pbf-1.pdf 
Size:236K _upd-mosfet
IRFH8334PbF-1 HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 9.0 (@VGS = 10V) mΩ (@VGS = 4.5V) 13.5 Qg typ. 7.1 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features Benefits Industry-standard pinout PQFN 5 x 6mm Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mou
1.2. irfh8334pbf.pdf Size:298K _international_rectifier
IRFH8334PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 9.0 (@VGS = 10V) mΩ (@VGS = 4.5V) 13.5 Qg typ. 7.1 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 4.1°C/W) Enable better thermal dissipation Low Profile (<1
3.1. irfh8337pbf.pdf Size:226K _upd-mosfet
PD - 97646C IRFH8337PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 12.8 (@VGS = 10V) mΩ (@VGS = 4.5V) 19.9 Qg typ. 4.7 nC PQFN 5X6 mm ID 16.2 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 4.7°C/W) Enable better thermal dissipation
3.2. irfh8330pbf.pdf Size:227K _upd-mosfet
PD - 97652C IRFH8330PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 6.6 (@VGS = 10V) mΩ (@VGS = 4.5V) 9.9 Qg typ. 9.3 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance
3.3. irfh8337pbf.pdf Size:298K _international_rectifier
IRFH8337PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 12.8 (@VGS = 10V) mΩ (@VGS = 4.5V) 19.9 Qg typ. 4.7 nC PQFN 5X6 mm ID 16.2 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 4.7°C/W) Enable better thermal dissipation Low Profile
3.4. irfh8330pbf.pdf Size:332K _international_rectifier
IRFH8330PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 6.6 (@VGS = 10V) mΩ (@VGS = 4.5V) 9.9 Qg typ. 9.3 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 3.
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