IRFH8334PBF-1 Todos los transistores

 

IRFH8334PBF-1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH8334PBF-1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3.2 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 14 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.35 V

Carga de compuerta (Qg): 7.1 nC

Tiempo de elevación (tr): 14 nS

Conductancia de drenaje-sustrato (Cd): 260 pF

Resistencia drenaje-fuente RDS(on): 0.009 Ohm

Empaquetado / Estuche: PQFN5X6

Búsqueda de reemplazo de MOSFET IRFH8334PBF-1

 

IRFH8334PBF-1 Datasheet (PDF)

1.1. irfh8334pbf-1.pdf Size:236K _upd-mosfet

IRFH8334PBF-1
IRFH8334PBF-1

IRFH8334PbF-1 HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 9.0 (@VGS = 10V) mΩ (@VGS = 4.5V) 13.5 Qg typ. 7.1 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features Benefits Industry-standard pinout PQFN 5 x 6mm Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mou

1.2. irfh8334pbf.pdf Size:298K _international_rectifier

IRFH8334PBF-1
IRFH8334PBF-1

IRFH8334PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 9.0 (@VGS = 10V) mΩ (@VGS = 4.5V) 13.5 Qg typ. 7.1 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 4.1°C/W) Enable better thermal dissipation Low Profile (<1

 3.1. irfh8337pbf.pdf Size:226K _upd-mosfet

IRFH8334PBF-1
IRFH8334PBF-1

PD - 97646C IRFH8337PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 12.8 (@VGS = 10V) mΩ (@VGS = 4.5V) 19.9 Qg typ. 4.7 nC PQFN 5X6 mm ID 16.2 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 4.7°C/W) Enable better thermal dissipation

3.2. irfh8330pbf.pdf Size:227K _upd-mosfet

IRFH8334PBF-1
IRFH8334PBF-1

PD - 97652C IRFH8330PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 6.6 (@VGS = 10V) mΩ (@VGS = 4.5V) 9.9 Qg typ. 9.3 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance

 3.3. irfh8337pbf.pdf Size:298K _international_rectifier

IRFH8334PBF-1
IRFH8334PBF-1

IRFH8337PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 12.8 (@VGS = 10V) mΩ (@VGS = 4.5V) 19.9 Qg typ. 4.7 nC PQFN 5X6 mm ID 16.2 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 4.7°C/W) Enable better thermal dissipation Low Profile

3.4. irfh8330pbf.pdf Size:332K _international_rectifier

IRFH8334PBF-1
IRFH8334PBF-1

IRFH8330PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 6.6 (@VGS = 10V) mΩ (@VGS = 4.5V) 9.9 Qg typ. 9.3 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 3.

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


IRFH8334PBF-1
  IRFH8334PBF-1
  IRFH8334PBF-1
  IRFH8334PBF-1
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SIZ710DT | SIZ704DT | SIZ702DT | SIZ342DT | SIZ340DT | SIZ300DT | SIX3439K | SISS40DN | SISS23DN | SISA18DN | SISA18ADN | SISA14DN | SISA12DN | SISA12ADN | SISA10DN |

 

 

 
Back to Top