IRFHM830DPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFHM830DPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 2.8 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 20 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2.35 V
Carga de compuerta (Qg): 13 nC
Tiempo de elevación (tr): 20 nS
Conductancia de drenaje-sustrato (Cd): 363 pF
Resistencia drenaje-fuente RDS(on): 0.0043 Ohm
Empaquetado / Estuche: PQFN3.3X3.3
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IRFHM830DPBF Datasheet (PDF)
1.1. irfhm830dpbf.pdf 
Size:243K _upd-mosfet
PD -96327A IRFHM830DPbF HEXFET® Power MOSFET VDS 30 V RDS(on) max D 5 4 G 4.3 mΩ (@VGS = 10V) D 6 3 S Qg (typical) 13 nC D 7 2 S RG (typical) 1.1 D 8 1 S Ω ID 40 A 3.3mm x 3.3mm PQFN (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for Buck Converters Features and Benefits Features Benefits Low RDSon (≤ 4.3mΩ) Lower Conduction Losses Schottky intrin
1.2. irfhm830d.pdf Size:243K _international_rectifier
PD -96327A IRFHM830DPbF HEXFET® Power MOSFET VDS 30 V RDS(on) max D 5 4 G 4.3 mΩ (@VGS = 10V) D 6 3 S Qg (typical) 13 nC D 7 2 S RG (typical) 1.1 D 8 1 S Ω ID 40 A 3.3mm x 3.3mm PQFN (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for Buck Converters Features and Benefits Features Benefits Low RDSon (≤ 4.3mΩ) Lower Conduction Losses Schottky intrin
2.1. irfhm830pbf.pdf Size:229K _upd-mosfet
PD - 97547A IRFHM830PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 3.8 mΩ D 5 4 G (@VGS = 10V) D 6 3 S Qg (typical) 15 nC D 7 2 S RG (typical) 2.5 Ω D 8 1 S 3.3mm x 3.3mm PQFN ID 40 A (@Tc(Bottom) = 25°C) Applications • Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Benefits Low RDSon (<3.8mΩ) Lower Conduction Losses Low Thermal Resi
2.2. irfhm830pbf.pdf Size:262K _international_rectifier
IRFHM830PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 3.8 mΩ (@VGS = 10V) Qg (typical) 15 nC RG (typical) 2.5 Ω 3.3mm x 3.3mm PQFN ID 40 A (@Tc(Bottom) = 25°C) Applications • Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Benefits Low RDSon (<3.8mΩ) Lower Conduction Losses Low Thermal Resistance to PCB (<3.4°C/W) Enable better thermal di
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