AM7343P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM7343P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Paquete / Cubierta: DFN3X3
AM7343P Datasheet (PDF)
am7343p.pdf

Analog Power AM7343PP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 12 @ VGS = -10V -14converters and power management in portable and -4018 @ VGS = -4.5V -12batt
am7340n.pdf

Analog Power AM7340NN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 5.5 @ VGS = 10V 21converters and power management in portable and 407 @ VGS = 4.5V 19battery-p
am7341p.pdf

Analog Power AM7341PP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 19 @ VGS = -10V -12converters and power management in portable and -4027 @ VGS = -4.5V -10batt
Otros transistores... IRFHS8242PBF , IRFHS8342PBF , IRFHS9301PBF , IRFHS9351PBF , IRFR310PBF , IRFR320PBF , AM7340N , AM7341P , IRFB4227 , AM7360N , AM7361P , AM7362NA , AM7363P , AM7364N , AM7365P , AM7366N , AM7367P .



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