AM7343P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM7343P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Encapsulados: DFN3X3
Búsqueda de reemplazo de AM7343P MOSFET
- Selecciónⓘ de transistores por parámetros
AM7343P datasheet
am7343p.pdf
Analog Power AM7343P P-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 12 @ VGS = -10V -14 converters and power management in portable and -40 18 @ VGS = -4.5V -12 batt
am7340n.pdf
Analog Power AM7340N N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 5.5 @ VGS = 10V 21 converters and power management in portable and 40 7 @ VGS = 4.5V 19 battery-p
am7341p.pdf
Analog Power AM7341P P-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 19 @ VGS = -10V -12 converters and power management in portable and -40 27 @ VGS = -4.5V -10 batt
Otros transistores... IRFHS8242PBF, IRFHS8342PBF, IRFHS9301PBF, IRFHS9351PBF, IRFR310PBF, IRFR320PBF, AM7340N, AM7341P, 10N60, AM7360N, AM7361P, AM7362NA, AM7363P, AM7364N, AM7365P, AM7366N, AM7367P
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