AM7343P
MOSFET. Datasheet pdf. Equivalent
Type Designator: AM7343P
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 14
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 50
nC
trⓘ - Rise Time: 10
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package:
DFN3X3
AM7343P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM7343P
Datasheet (PDF)
..1. Size:73K analog power
am7343p.pdf
Analog Power AM7343PP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 12 @ VGS = -10V -14converters and power management in portable and -4018 @ VGS = -4.5V -12batt
9.1. Size:74K analog power
am7340n.pdf
Analog Power AM7340NN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 5.5 @ VGS = 10V 21converters and power management in portable and 407 @ VGS = 4.5V 19battery-p
9.2. Size:73K analog power
am7341p.pdf
Analog Power AM7341PP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 19 @ VGS = -10V -12converters and power management in portable and -4027 @ VGS = -4.5V -10batt
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