AM7361P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM7361P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 182 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm

Encapsulados: DFN3X3

 Búsqueda de reemplazo de AM7361P MOSFET

- Selecciónⓘ de transistores por parámetros

 

AM7361P datasheet

 ..1. Size:293K  analog power
am7361p.pdf pdf_icon

AM7361P

Analog Power AM7361P P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 38 @ VGS = -10V -7.9 Low thermal impedance -60 45 @ VGS = -4.5V -7.3 Fast switching speed Typical Applications DFN3x3-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABS

 9.1. Size:374K  analog power
am7366n.pdf pdf_icon

AM7361P

Analog Power AM7366N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 50 @ VGS = 10V 6.9 Low thermal impedance 60 60 @ VGS = 4.5V 6.3 Fast switching speed Typical Applications DFN3x3-8L DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE N

 9.2. Size:469K  analog power
am7360n.pdf pdf_icon

AM7361P

Analog Power AM7360N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 22 @ VGS = 10V 11 Low thermal impedance 60 26 @ VGS = 4.5V 10 Fast switching speed DFN3x3-8L Typical Applications DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTE

 9.3. Size:67K  analog power
am7362na.pdf pdf_icon

AM7361P

Analog Power AM7362NA N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 8 @ VGS = 10V 18 converters and power management in portable and 60 9 @ VGS = 4.5V 17 battery-po

Otros transistores... IRFHS9301PBF, IRFHS9351PBF, IRFR310PBF, IRFR320PBF, AM7340N, AM7341P, AM7343P, AM7360N, IRFB4115, AM7362NA, AM7363P, AM7364N, AM7365P, AM7366N, AM7367P, AM7380N, AM7381P