AM7365P Todos los transistores

 

AM7365P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM7365P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 232 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: DFN3X3
 

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AM7365P Datasheet (PDF)

 ..1. Size:376K  analog power
am7365p.pdf pdf_icon

AM7365P

Analog Power AM7365PP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)24 @ VGS = -10V -10 Low thermal impedance -6032 @ VGS = -4.5V -9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.1. Size:374K  analog power
am7366n.pdf pdf_icon

AM7365P

Analog Power AM7366NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)50 @ VGS = 10V6.9 Low thermal impedance 6060 @ VGS = 4.5V6.3 Fast switching speed Typical Applications: DFN3x3-8L DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE N

 9.2. Size:469K  analog power
am7360n.pdf pdf_icon

AM7365P

Analog Power AM7360NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)22 @ VGS = 10V11 Low thermal impedance 6026 @ VGS = 4.5V10 Fast switching speed DFN3x3-8L Typical Applications: DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTE

 9.3. Size:67K  analog power
am7362na.pdf pdf_icon

AM7365P

Analog Power AM7362NAN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 8 @ VGS = 10V 18converters and power management in portable and 609 @ VGS = 4.5V 17battery-po

Otros transistores... AM7340N , AM7341P , AM7343P , AM7360N , AM7361P , AM7362NA , AM7363P , AM7364N , STP75NF75 , AM7366N , AM7367P , AM7380N , AM7381P , AM7382N , AM7390NS , AM7400N , AM7401P .

History: IRLR110 | STFU16N65M2 | SSS1206 | SI9933ADY | 18N10W | HSP0048 | HUFA76407DK8TF085

 

 
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