Справочник MOSFET. AM7365P

 

AM7365P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AM7365P
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 3.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 232 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
   Тип корпуса: DFN3X3

 Аналог (замена) для AM7365P

 

 

AM7365P Datasheet (PDF)

 ..1. Size:376K  analog power
am7365p.pdf

AM7365P
AM7365P

Analog Power AM7365PP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)24 @ VGS = -10V -10 Low thermal impedance -6032 @ VGS = -4.5V -9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.1. Size:374K  analog power
am7366n.pdf

AM7365P
AM7365P

Analog Power AM7366NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)50 @ VGS = 10V6.9 Low thermal impedance 6060 @ VGS = 4.5V6.3 Fast switching speed Typical Applications: DFN3x3-8L DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE N

 9.2. Size:469K  analog power
am7360n.pdf

AM7365P
AM7365P

Analog Power AM7360NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)22 @ VGS = 10V11 Low thermal impedance 6026 @ VGS = 4.5V10 Fast switching speed DFN3x3-8L Typical Applications: DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTE

 9.3. Size:67K  analog power
am7362na.pdf

AM7365P
AM7365P

Analog Power AM7362NAN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 8 @ VGS = 10V 18converters and power management in portable and 609 @ VGS = 4.5V 17battery-po

 9.4. Size:290K  analog power
am7363p.pdf

AM7365P
AM7365P

Analog Power AM7363PP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)47 @ VGS = -10V -7.1 Low thermal impedance -6060 @ VGS = -4.5V -6.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 9.5. Size:293K  analog power
am7361p.pdf

AM7365P
AM7365P

Analog Power AM7361PP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)38 @ VGS = -10V -7.9 Low thermal impedance -6045 @ VGS = -4.5V -7.3 Fast switching speed Typical Applications: DFN3x3-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABS

 9.6. Size:380K  analog power
am7364n.pdf

AM7365P
AM7365P

Analog Power AM7364NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)13 @ VGS = 10V14 Low thermal impedance 6016 @ VGS = 4.5V12 Fast switching speed Typical Applications: DFN3x3-8L DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED

 9.7. Size:375K  analog power
am7367p.pdf

AM7365P
AM7365P

Analog Power AM7367PP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)82 @ VGS = -10V -5.4 Low thermal impedance -60100 @ VGS = -4.5V -4.9 Fast switching speed Typical Applications: Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWIS

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