AM7461P Todos los transistores

 

AM7461P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM7461P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SOIC-8PP

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AM7461P Datasheet (PDF)

 ..1. Size:175K  analog power
am7461p.pdf

AM7461P
AM7461P

Analog Power AM7461PP-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 45 @ VGS = -10V -10converters and power management in portable and -60battery-powered products

 9.1. Size:312K  analog power
am7463p.pdf

AM7461P
AM7461P

Analog Power AM7463PP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)12 @ VGS = -10V -17 Low thermal impedance -6016 @ VGS = -4.5V -15 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO

 9.2. Size:371K  analog power
am7462n.pdf

AM7461P
AM7461P

Analog Power AM7462NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)22 @ VGS = 10V13 Low thermal impedance 6026 @ VGS = 4.5V12 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

 9.3. Size:179K  analog power
am7464n.pdf

AM7461P
AM7461P

Analog Power AM7464NN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 82 @ VGS = 10V 6.460battery-powered products such a

 9.4. Size:332K  analog power
am7466n.pdf

AM7461P
AM7461P

Analog Power AM7466NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features:rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)6 @ VGS = 10V20 Low thermal impedance607 @ VGS = 4.5V18 Fast switching speedTypical Applications:DFN5x6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion CircuitsABSOLUTE MAXIMUM RA

 9.5. Size:318K  analog power
am7460n.pdf

AM7461P
AM7461P

Analog Power AM7460NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)26 @ VGS = 10V12 Low thermal impedance 6036 @ VGS = 4.5V10 Fast switching speed Typical Applications: DFN5X6-8L DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOT

 9.6. Size:323K  analog power
am7468n.pdf

AM7461P
AM7461P

Analog Power AM7468NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)17 @ VGS = 10V15 Low thermal impedance 6021 @ VGS = 4.5V13 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUT

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