AM7461P. Аналоги и основные параметры

Наименование производителя: AM7461P

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 12 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm

Тип корпуса: SOIC-8PP

Аналог (замена) для AM7461P

- подборⓘ MOSFET транзистора по параметрам

 

AM7461P даташит

 ..1. Size:175K  analog power
am7461p.pdfpdf_icon

AM7461P

Analog Power AM7461P P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( ) ID (A) dissipation. Typical applications are DC-DC 45 @ VGS = -10V -10 converters and power management in portable and -60 battery-powered products

 9.1. Size:312K  analog power
am7463p.pdfpdf_icon

AM7461P

Analog Power AM7463P P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 12 @ VGS = -10V -17 Low thermal impedance -60 16 @ VGS = -4.5V -15 Fast switching speed Typical Applications DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO

 9.2. Size:371K  analog power
am7462n.pdfpdf_icon

AM7461P

Analog Power AM7462N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 22 @ VGS = 10V 13 Low thermal impedance 60 26 @ VGS = 4.5V 12 Fast switching speed Typical Applications DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

 9.3. Size:179K  analog power
am7464n.pdfpdf_icon

AM7461P

Analog Power AM7464N N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 82 @ VGS = 10V 6.4 60 battery-powered products such a

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