AM7960N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM7960N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 16 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 36 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm
Paquete / Cubierta: SOIC-8PP
Búsqueda de reemplazo de AM7960N MOSFET
AM7960N Datasheet (PDF)
am7960n.pdf

Analog Power AM7960NDual N-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat 8.4 @ V = 10V 36GSdissipation. Typical applications are DC-DC 60converters and power management in portable and 9.4 @ V = 4.5V 34GS
am7961p.pdf

Analog Power AM7961PDual P-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)44 @ VGS = -10V -6.2 Low thermal impedance -6052 @ VGS = -4.5V -5.7 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
am7962n.pdf

Analog Power AM7962NDual N-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat 23 @ V = 10V 22GSdissipation. Typical applications are DC-DC 60converters and power management in portable and 28 @ V = 4.5V 20GS
Otros transistores... AM7640N , AM7910N , AM7920N , AM7924N , AM7930N , AM7931P , AM7933P , AM7940N , AO3407 , AM7961P , AM7962N , AM80N03-05D , AM80N03-06D , AM80N06-05D , AM80N20-40PCFM , AM8204 , AM8205 .
History: SI7866ADP
History: SI7866ADP



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