AM7960N
MOSFET. Datasheet pdf. Equivalent
Type Designator: AM7960N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 16
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 36
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 30
nC
trⓘ - Rise Time: 10
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0084
Ohm
Package: SOIC-8PP
AM7960N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM7960N
Datasheet (PDF)
..1. Size:63K analog power
am7960n.pdf 
Analog Power AM7960NDual N-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat 8.4 @ V = 10V 36GSdissipation. Typical applications are DC-DC 60converters and power management in portable and 9.4 @ V = 4.5V 34GS
9.1. Size:324K analog power
am7961p.pdf
Analog Power AM7961PDual P-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)44 @ VGS = -10V -6.2 Low thermal impedance -6052 @ VGS = -4.5V -5.7 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
9.2. Size:64K analog power
am7962n.pdf
Analog Power AM7962NDual N-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat 23 @ V = 10V 22GSdissipation. Typical applications are DC-DC 60converters and power management in portable and 28 @ V = 4.5V 20GS
Datasheet: IRFP360LC
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