AM8205 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM8205

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: SOT-26

 Búsqueda de reemplazo de AM8205 MOSFET

- Selecciónⓘ de transistores por parámetros

 

AM8205 datasheet

 ..1. Size:827K  ait semi
 am8205.pdf pdf_icon

AM8205

AiT Semiconductor Inc. AM8205 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8205 uses advanced trench technology to V = 20V, I = 6A DS D provide excellent R , low gate charge and R

 9.1. Size:795K  ait semi
 am8208.pdf pdf_icon

AM8205

AiT Semiconductor Inc. AM8208 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8208 uses advanced trench technology to V = 20V, I = 6A DS D provide excellent R , low gate charge and Typ.R = 17m @ V = 4.5V DS(ON) DS(ON) GS operation with gate voltages as low as 2.5V. This Typ.R = 22m @ V = 2.5V DS(ON) GS device is suitable for use

 9.2. Size:788K  ait semi
 am8206.pdf pdf_icon

AM8205

AiT Semiconductor Inc. AM8206 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8206 uses advanced trench technology to V = 20V, I = 7A DS D provide excellent R , low gate charge and R

 9.3. Size:812K  ait semi
 am8204.pdf pdf_icon

AM8205

AiT Semiconductor Inc. AM8204 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8204 uses advanced trench technology to V = 20V, I = 6A DS D provide excellent R , low gate charge and Typ.R = 17m @ V = 4.5V DS(ON) DS(ON) GS operation with gate voltages as low as 2.5V. This Typ.R = 22m @ V = 2.5V DS(ON) GS device is suitable for use

MOSTRAR MÁS

Otros transistores... AM7960N, AM7961P, AM7962N, AM80N03-05D, AM80N03-06D, AM80N06-05D, AM80N20-40PCFM, AM8204, IRF840, AM8206, AM8208, AM8810, AM8811, AM8812, AM8814, AM8820, AM8881