AM8811 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM8811

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.2 nS

Cossⓘ - Capacitancia de salida: 232 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: TSSOP-8

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AM8811 datasheet

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 am8811.pdf pdf_icon

AM8811

AiT Semiconductor Inc. AM8811 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8811 uses advanced trench technology to V =20V,I =11A DS D provide excellent R , low gate charge and R

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 am8814.pdf pdf_icon

AM8811

AiT Semiconductor Inc. AM8814 www.ait-ic.com MOSFET 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM8814 is the Dual N-Channel logic 20V/7.5A, R =12.5m (typ.)@V =4.5V DS(ON) GS enhancement mode power field effect transistor which 20V/5.5A, R =16m (typ.)@V =2.5V DS(ON) GS is produced using high cell density advanced trench Super high design for

 9.2. Size:876K  ait semi
 am8812.pdf pdf_icon

AM8811

AiT Semiconductor Inc. AM8812 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8812 uses advanced trench technology to V =20V,I =8A, DS D provide excellent R , low gate charge and Typ.R = 11m @ V =4.5V DS(ON) DS(ON) GS operation with gate voltages as low as 1.8V. This Typ.R = 15m @ V =2.5V DS(ON) GS device is suitable for use as

 9.3. Size:798K  ait semi
 am8810.pdf pdf_icon

AM8811

AiT Semiconductor Inc. AM8810 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8810 uses advanced trench technology to V =20V,I =7A, DS D provide excellent R , low gate charge and Typ.R = 16m @ V =4.5V DS(ON) DS(ON) GS operation with gate voltages as low as 2.5V. This Typ.R = 20m @ V =2.5V DS(ON) GS device is suitable for use as

MOSTRAR MÁS

Otros transistores... AM80N03-06D, AM80N06-05D, AM80N20-40PCFM, AM8204, AM8205, AM8206, AM8208, AM8810, 50N06, AM8812, AM8814, AM8820, AM8881, AM8882, AM8958, AM8958C, AM8N20-600D