All MOSFET. AM8811 Datasheet

 

AM8811 Datasheet and Replacement


   Type Designator: AM8811
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 232 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TSSOP-8
 

 AM8811 substitution

   - MOSFET ⓘ Cross-Reference Search

 

AM8811 Datasheet (PDF)

 ..1. Size:779K  ait semi
am8811.pdf pdf_icon

AM8811

AiT Semiconductor Inc. AM8811 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8811 uses advanced trench technology to V =20V,I =11A DS Dprovide excellent R , low gate charge and R

 9.1. Size:727K  ait semi
am8814.pdf pdf_icon

AM8811

AiT Semiconductor Inc. AM8814 www.ait-ic.com MOSFET 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM8814 is the Dual N-Channel logic 20V/7.5A, R =12.5m(typ.)@V =4.5V DS(ON) GSenhancement mode power field effect transistor which 20V/5.5A, R =16m(typ.)@V =2.5V DS(ON) GSis produced using high cell density advanced trench Super high design for

 9.2. Size:876K  ait semi
am8812.pdf pdf_icon

AM8811

AiT Semiconductor Inc. AM8812 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8812 uses advanced trench technology to V =20V,I =8A, DS Dprovide excellent R , low gate charge and Typ.R = 11m @ V =4.5V DS(ON) DS(ON) GS operation with gate voltages as low as 1.8V. This Typ.R = 15m @ V =2.5V DS(ON) GSdevice is suitable for use as

 9.3. Size:798K  ait semi
am8810.pdf pdf_icon

AM8811

AiT Semiconductor Inc. AM8810 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8810 uses advanced trench technology to V =20V,I =7A, DS Dprovide excellent R , low gate charge and Typ.R = 16m @ V =4.5V DS(ON) DS(ON) GS operation with gate voltages as low as 2.5V. This Typ.R = 20m @ V =2.5V DS(ON) GSdevice is suitable for use as

Datasheet: AM80N03-06D , AM80N06-05D , AM80N20-40PCFM , AM8204 , AM8205 , AM8206 , AM8208 , AM8810 , 50N06 , AM8812 , AM8814 , AM8820 , AM8881 , AM8882 , AM8958 , AM8958C , AM8N20-600D .

History: AP4955GM | ELM14430AA | IXTH6N150 | RJK0629DPE | HM1607D | UT4446 | FTK4N65I

Keywords - AM8811 MOSFET datasheet

 AM8811 cross reference
 AM8811 equivalent finder
 AM8811 lookup
 AM8811 substitution
 AM8811 replacement

 

 
Back to Top

 


 
.