AM8811
MOSFET. Datasheet pdf. Equivalent
Type Designator: AM8811
Marking Code: TMX8
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17.5
nC
trⓘ - Rise Time: 7.2
nS
Cossⓘ -
Output Capacitance: 232
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package:
TSSOP-8
AM8811
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM8811
Datasheet (PDF)
..1. Size:779K ait semi
am8811.pdf
AiT Semiconductor Inc. AM8811 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8811 uses advanced trench technology to V =20V,I =11A DS Dprovide excellent R , low gate charge and R
9.1. Size:727K ait semi
am8814.pdf
AiT Semiconductor Inc. AM8814 www.ait-ic.com MOSFET 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM8814 is the Dual N-Channel logic 20V/7.5A, R =12.5m(typ.)@V =4.5V DS(ON) GSenhancement mode power field effect transistor which 20V/5.5A, R =16m(typ.)@V =2.5V DS(ON) GSis produced using high cell density advanced trench Super high design for
9.2. Size:876K ait semi
am8812.pdf
AiT Semiconductor Inc. AM8812 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8812 uses advanced trench technology to V =20V,I =8A, DS Dprovide excellent R , low gate charge and Typ.R = 11m @ V =4.5V DS(ON) DS(ON) GS operation with gate voltages as low as 1.8V. This Typ.R = 15m @ V =2.5V DS(ON) GSdevice is suitable for use as
9.3. Size:798K ait semi
am8810.pdf
AiT Semiconductor Inc. AM8810 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8810 uses advanced trench technology to V =20V,I =7A, DS Dprovide excellent R , low gate charge and Typ.R = 16m @ V =4.5V DS(ON) DS(ON) GS operation with gate voltages as low as 2.5V. This Typ.R = 20m @ V =2.5V DS(ON) GSdevice is suitable for use as
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